Initial Growth of Cu Films Fabricated by Sputtering and Evaporation.

High coercivity SmFeAlC thin films fabricated by multilayer sputtering

Multilayer sputtering of SmFe/C(Al) plus appropriate thermal processing has been used to fabricate SmFeC thin films with A1 substitution for Fe. It was found that the SmFeAlC thin films exhibited exceptionally high Coercivities. A coercivity of 28 kOe was realized for the thin film with structure of Ta( l000~) / lSmFe(40~~/ G(Al)(5,&)]~50/Ta(200@ with subsequent annealing at 650°C.

High coercivity SmFeSiC films fabricated by multilayer sputtering

SmFeSiC thin films have been obtained by sputtering SmFe/C(Si) multilayers with a Ta underlayer on Si substrates and subsequently annali The coercivity of the SmF films strongly depends on the sputtering and annea itions. The influence of the thickness of the Ta underlayer, the thickness ratio of SmFe to C(Si), the argon pressure and heat treatment Inplane Coercivities up to 7.2 kOe and squaren...

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Textured Growth of Strontium Ferrite Thin Films by Sputtering

Growth-front roughening in amorphous silicon films by sputtering

The growth-front roughness of amorphous silicon films grown by dc magnetron sputtering at low pressure has been investigated using atomic force microscopy. The interface width w increases as a power law of deposition time t, w;t, with b50.4160.01, and the lateral correlation length j grows as j;t, with 1/z 50.4260.02. The roughness exponent extracted from height-height correlation analysis is a...